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US 11,832,535 B2Granted
Two dimensional materials for use in ultra high density information storage and sensor devices
AssigneeNortheastern University
InventorsZachariah Boston Hennighausen, Swastik Kar
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Abstract
2D heterostructures comprising Bi2Se3/MoS2, Bi2Se3/MoSe2, Bi2Se3/WS2, Bi2Se3/MoSe2. 2xS2x, or mixtures thereof in which oxygen is intercalated between the layers at selected positions provide high density storage devices, sensors, and display devices. The properties of the 2D heterostructures can be configured utilizing abeam of electromagnetic waves or particles in an oxygen controlled atmosphere.
Claims22
A method of making a 2D heterostructure, the method comprising:
- growing a first crystalline layer comprising a material selected from the group consisting of MoSe2, MoS2, WS2, MoSe2-2xS2x, and combinations thereof in an inert atmosphere;
- growing a second crystalline layer comprising or consisting of Bi2Se3 in an inert atmosphere, the second crystalline layer in contact with the first crystalline layer at an interlayer region, the second crystalline layer operative to suppress photoluminescence of the first crystalline layer;
- and
- adding oxygen to the interlayer region at selected positions, wherein the addition of oxygen reverses the suppression of photoluminescence at said positions in proportion to the amount of oxygen added.
1 more element
A 2D heterostructure comprising:
- a first layer comprising a material selected from the group consisting of MoSe2, MoS2, WS2, MoSe2-2xS2x, and combinations thereof;
- a second layer deposited on the first layer, wherein the second layer comprises one or more atomic layers of Bi2Se3;
- an interlayer region between the first layer and the second layer, the interlayer region comprising oxygen at selected positions within the interlayer region.
Dependencies are inferred from the claim text.