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US 11,831,063 B2Granted
Element having antenna array structure
AssigneeCanon Kabushiki Kaisha
InventorsYasushi Koyama, Yoshinori Tateishi
Life of this patent
Estimating the term…
Abstract
An element includes a coupling line in which a first conductor layer, a dielectric layer, and a second conductor layer are stacked in this order, and which is connected to the second conductor layer in order to mutually synchronize a plurality of antennas at a frequency of a terahertz wave; and a bias line connecting a power supply for supplying a bias signal to a semiconductor layer and the second conductor layer. A wiring layer in which the coupling line is formed and a wiring layer in which the bias line is formed are different layers. The bias line is disposed in a layer between the first conductor layer and the second conductor layer.
Claims17
An element comprising:
- an antenna array in which a plurality of antennas are arranged, with each of the antennas including
- a first conductor layer,
- a semiconductor layer that is electrically connected to the first conductor layer and produces or detects a terahertz wave,
- a second conductor layer that is electrically connected to the semiconductor layer and faces the first conductor layer via the semiconductor layer, and
- a dielectric layer that is located between the first conductor layer and the second conductor layer;
- a coupling line that is connected to the second conductor layer configured to make mutual synchronization between the plurality of antennas at a frequency of the terahertz wave;
- and
- a bias line that connects a power source for supplying a bias signal to the semiconductor layer and the second conductor layer, wherein
- a wiring layer in which the coupling line is formed and a wiring layer in which the bias line is formed are different layers, and
- the bias line is disposed in a layer between the first conductor layer and the second conductor layer.
7 more elements
An element comprising:
- an antenna array in which a plurality of antennas are arranged, with each of the antennas including
- a first conductor layer,
- a semiconductor layer that is electrically connected to the first conductor layer and produces or detects a terahertz wave,
- a second conductor layer that is electrically connected to the semiconductor layer and faces the first conductor layer via the semiconductor layer, and
- a dielectric layer that is located between the first conductor layer and the second conductor layer;
- a coupling line that is connected to the second conductor layer configured to make mutual synchronization between the plurality of antennas at a frequency of the terahertz wave;
- and
- a bias line that connects a power source for supplying a bias signal to the semiconductor layer and the second conductor layer, wherein
- a wiring layer in which the coupling line is formed and a wiring layer in which the bias line is formed are different layers,
- the element further comprising a third conductor layer and a fourth conductor layer, wherein
- the coupling line is formed of the third conductor layer and the first conductor layer,
- the bias line is formed of the fourth conductor layer,
- the third conductor layer and the fourth conductor layer are arranged in different layers, and
- the first conductor layer, the third conductor layer, and the fourth conductor layer are stacked in this order.
11 more elements
An element comprising:
- an antenna array in which a plurality of antennas are arranged, with each of the antennas including
- a first conductor layer,
- a semiconductor layer that is electrically connected to the first conductor layer and produces or detects a terahertz wave,
- a second conductor layer that is electrically connected to the semiconductor layer and faces the first conductor layer via the semiconductor layer, and
- a dielectric layer that is located between the first conductor layer and the second conductor layer;
- a coupling line that is connected to the second conductor layer configured to make mutual synchronization between the plurality of antennas at a frequency of the terahertz wave;
- and
- a bias line that connects a power source for supplying a bias signal to the semiconductor layer and the second conductor layer, wherein
- a wiring layer in which the coupling line is formed and a wiring layer in which the bias line is formed are different layers, and
- adjacent antennas in the antenna array are connected to a common bias line disposed between the adjacent antennas.
7 more elements
Dependencies are inferred from the claim text.