US 11,830,917 B2Granted

Unit cell and power amplifier module

AssigneeMurata Manufacturing Co., Ltd.

InventorsYasunari Umemoto, Shaojun Ma, Shigeki Koya

Life of this patent

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Abstract

A collector layer is disposed on a substrate. The collector layer is a continuous region when viewed in plan. A base layer is disposed on the collector layer. An emitter layer is disposed on the base layer. An emitter mesa layer is disposed on the emitter layer. Two base electrodes are located outside the emitter mesa layer and within the base layer when viewed in plan. The two base electrodes are electrically connected to the base layer. Two capacitors are disposed on or above the substrate. Each of the two capacitors is connected between a corresponding one of the two base electrodes and a first line above the substrate. Two resistance elements are disposed on or above the substrate. Each of the two resistance elements is connected between a corresponding one of the two base electrodes and a second line on or above the substrate.

Claims20

Dependent claims

A unit cell comprising:

a collector layer on a substrate, the collector layer being a continuous region when viewed in plan;
a base layer on the collector layer;
an emitter layer on the base layer;
an emitter mesa layer on the emitter layer, the emitter mesa layer providing a path for emitter current carried through the emitter layer;
two base electrodes that are located outside the emitter mesa layer and within the base layer when viewed in plan, the two base electrodes being electrically connected to the base layer;
two capacitors on or above the substrate, each of the two capacitors being connected between a corresponding one of the two base electrodes and a first line above the substrate;
and
two resistance elements on or above the substrate, each of the two resistance elements being connected between the corresponding one of the two base electrodes and a second line on or above the substrate.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/027,618Filed 21 Sep 2020
Priority: JP 2019-17579226 Sep 2019
Published: US 2021/0098585 A11 Apr 2021
Granted: 28 Nov 2023
Term ends: Not estimatedThe source records don’t support an estimate.

Classification18 codes

H10D 64/281
Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates: base electrodes for bipolar transistors
H03F 1/0205
Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation: in transistor amplifiers
H03F 3/195
With semiconductor devices only: in integrated circuits
H03F 3/21
Power amplifiers, e.g. Class B amplifiers, Class C amplifiers: with semiconductor devices only