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US 11,830,814 B2Granted
Wiring material for semiconductor device, wiring for semiconductor device including the same, and semiconductor device including the wiring
AssigneeSamsung Electronics Co., Ltd.
InventorsJoungeun Yoo, Youngjae Kang, Duseop Yoon
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Abstract
Provided are a wiring material for a semiconductor device, the wiring material including a boride-based compound containing boron and at least one metal selected from elements of Groups 2 to 14, a wiring for a semiconductor device including the same, and a semiconductor device including the wiring containing the wiring material.
Claims28
A wiring material for a semiconductor device, the wiring material comprising:
- a boride-based compound containing boron and at least one metal,
- wherein the metal is tantalum (Ta), vanadium (V), titanium (Ti), zirconium (Zr), hafnium (Hf), uranium (U), manganese (Mn), dysprosium (Dy), erbium (Er), cerium (Ce), indium (In), gallium (Ga), or a combination thereof.
A wiring material for a semiconductor device, the wiring material comprising:
- a boride-based compound represented by Formula 2:
- M1aM2cBb [Formula 2]
- wherein in Formula 2,
- M1 is W, Mo, Ta, Nb, Cr, Mn, V, Fe, Zr, Ti, Hf, or a combination thereof,
- M2 is Al, Ga, In, or a combination thereof,
- a is a number of 1 to 5,
- b is a number of 1 to 5, and
- c is a number of 1 to 10.
5 more elements
A wiring material for a semiconductor device, the wiring material comprising:
- a boride-based compound,
- wherein the boride-based compound is TaB2, TiB2, ZrB2, HfB2, UB2, MnB2, DyB2, ErB2, Mn3B4, DyB4, ErB4, UB4, Mo2B5, W2B5, LaB6, CeB6, DyB6, ErB6, MoAlB, WAlB, Hf2AlB, Hf2GaB, Hf2InB, Ti2AlB, Ti2GaB, Ti2InB, Zr2AlB, Zr2GaB, Zr2InB, Cr2AlB2, Mn2AlB2, Fe2AlB2, Cr4AlB6, or a combination thereof.
Dependencies are inferred from the claim text.