Method for manufacturing piezoelectric bulk layers with tilted c-axis orientation
AssigneeQorvo US, Inc.
InventorsDerya Deniz, Robert Kraft, John Belsick
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Abstract
Methods for depositing bulk layer crystalline material having a predetermined c-axis tilt on a substrate include a first step of depositing a first portion of bulk layer material at a first incidence angle to achieve a predetermined c-axis tilt, and a second step of depositing a second portion of the bulk material layer onto the first portion at a second incidence angle that is smaller than the first incidence angle. The second portion has a second c-axis tilt that substantially aligns with the first c-axis tilt.
Claims20
A method for preparing a crystalline bulk layer having a preselected c-axis tilt angle using a two-step bulk layer deposition process, the method comprising:
- performing a first growth step to deposit a first portion of the bulk layer onto a substrate at a first incidence angle (alpha), the first portion having a first c-axis tilt angle;
- and
- performing a second growth step to deposit a second portion of the bulk layer over the first portion at a second incidence angle (beta) that is smaller than the first incidence angle (alpha), the second portion having a second c-axis tilt angle that substantially aligns with the first c-axis tilt angle, thereby preparing the crystalline bulk layer having the preselected c-axis tilt angle.
Dependencies are inferred from the claim text.