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US 11,823,866 B2Granted
Thin film forming method
AssigneeASM IP Holding B.V.
InventorsSungKyu Kang, JongWan Choi, YoungHoon Kim, HieChul Kim, KyungEun Lee, TaeHee Yoo
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Abstract
A substrate processing method for filling a gap without seams or voids comprising: providing a substrate with a gap in a reaction chamber, pumping down the reaction chamber to a pressure at or below 5 Torr and filling the gap with a film by alternately and sequentially supplying a precursor, a reactant and a radio frequency electromagnetic radiation comprising a relatively high radio frequency component and a relatively low radio frequency component.
Claims14
A substrate processing method comprising:
- providing a substrate with a trench in a reaction chamber;
- pumping down the reaction chamber to a pressure at or below 5 Torr;
- and,
- filling the trench with a film by a deposition cycle comprising:
- supplying a precursor;
- continuously supplying a reactant;
- and,
- supplying a radio frequency electromagnetic radiation comprising a relatively high radio frequency component and a relatively low radio frequency component and, repeating the deposition cycle until the trench is filled with the film.
5 more elements
Dependencies are inferred from the claim text.