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AssigneeSeeQC, Inc.
InventorsOleg Mukhanov, Alan M. Kadin, Ivan P. Nevirkovets, Igor V. Vernik
Estimating the term…
A superconducting memory cell includes a magnetic Josephson junction (MJJ) with a ferromagnetic material, having at least two switchable states of magnetization. The binary state of the MJJ manifests itself as a pulse appearing, or not appearing, on the output. A superconducting memory includes an array of memory cells. Each memory cell includes a comparator with at least one MJJ. Selected X and Y-directional write lines in their combination are capable of switching the magnetization of the MJJ. A superconducting device includes a first and a second junction in a stacked configuration. The first junction has an insulating layer barrier, and the second junction has an insulating layer sandwiched in-between two ferromagnetic layers as barrier. An electrical signal inputted across the first junction is amplified across the second junction.
A superconducting device, comprising:
A superconducting device, comprising:
A method of operating a Josephson junction, having a pair of spaced superconducting films, respectively separated by at least one barrier film and at least one non-superconducting ferromagnetic film, responsive to a voltage across the pair of spaced superconducting films and a magnetic flux, wherein the at least one non-superconducting ferromagnetic film comprises at least one magnetic domain having a rotatable magnetization vector which influences the magnetic flux, configured to have a first magnetization vector in which the voltage difference of pair of electrodes induces a switching of the Josephson junction and a second magnetization vector in which the voltage difference of pair of electrodes does not induce a switching of the Josephson junction, the method comprising:
Dependencies are inferred from the claim text.