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US 11,822,239 B2Granted
Resist composition and patterning process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsJun Hatakeyama, Masaki Ohashi, Takayuki Fujiwara
Life of this patent
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Abstract
A resist composition comprising a base polymer and a quencher in the form of a heterocyclic amine compound having a tertiary ester structure offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.
Claims16
A resist composition comprising a base polymer and a quencher, the quencher containing at least one compound selected from compounds having the formula (A-1) and compounds having the formula (A-2):
- wherein R1 is a single bond or a C1-C30 m-valent hydrocarbon group which may contain at least one moiety selected from among hydroxyl, thiol, ester bond, thioester bond, thionoester bond, ether bond, sulfide bond, halogen, nitro, amino, amide bond, sulfonyl, sulfonate bond, sultone ring, lactam ring, and carbonate, exclusive of an aromatic group having iodine bonded to the aromatic ring,
- R2 and R3 are each independently a C1-C6 alkyl group, R2 and R3 may bond together to form a ring with the carbon atom to which they are attached,
- R4 is each independently hydrogen, a C1-C4 straight or branched alkyl group, or C2-C12 straight or branched alkoxycarbonyl group,
- R6 is each independently hydrogen, a C1-C4 straight or branched alkyl group,
- R5 is a C1-C6 alkyl group, C2-C6 alkenyl group, C2-C6 alkynyl group or C6-C12 aryl group,
- R is a C2-C10 alicyclic group to form a ring with the nitrogen atom, and
- m is an integer of 1 to 6.
4 more elements
Dependencies are inferred from the claim text.