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AssigneeOxford University Innovation Limited
InventorsHenry James Snaith, Amir Abbas Hagighirad, Feliciano Giustino, Marina Filip, George Volonakis
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The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [BI]; (iii) one or more trications [BIII]; and (iv) one or more halide anions [X]. The invention also relates to a process for producing a semiconductor device comprising said semiconducting material. Also described is a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [BI] selected from Cu+, Ag+ and Au+; (iii) one or more trications [BIII]; and (iv) one or more halide anions [X].
A semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a double perovskite compound having a formula selected from:
A process for producing a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a double perovskite compound having a formula selected from:
A compound which is a double perovskite compound having a formula selected from:
Dependencies are inferred from the claim text.