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US 11,818,849 B1Granted
Increasing adhesion of metal-organic interfaces by silane vapor treatment
AssigneeYield Engineering Systems, Inc.
InventorsKenneth Sautter, Syndee Young, Charudatta Galande
Life of this patent
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Abstract
A method of improving the adhesion of a metal-organic interface in an electronic device includes providing a substrate with a metal structure, depositing a mono-layer of a selected silane composition on a surface of the metal structure with a vapor of the selected silane composition, and coating the treated surface with an organic material.
Claims20
A method of improving the adhesion of a metal-organic interface in an electronic device, comprising:
- providing a substrate with a metal structure formed thereon;
- treating a surface of the metal structure with a vapor of a silane composition to deposit a silane mono-layer on the metal structure, wherein the silane composition includes at least one of
- (i.)N-(2-Aminoethyl)-3-aminopropyltrimethoxysilane (AE-APTMS),
- (ii.) N,N′-Bis[(3-trimethoxysilyl)propyl]ethylenediamine (TMSP-ED),
- (iii.) Bis(3-Trimethoxysilylpropyl)amine, (TMSPA),
- (iv.) 3-Mercaptopropyltrimethoxysilane (MPTMS),
- (v.)N-(2-Aminoethyl)-3-aminopropylsilanetriol, 25% in water (AE-APST),
- (vi.) 3-Thiocyanatopropyltriethoxysilane, 92% (TCPTES),
- (vii.)N-(6-Aminohexyl)aminomethyl trimethoxysilane,
- (viii.) 1,3-Bis(3-aminopropyl)tetramethyldisiloxane,
- (ix.) Bis[3-(triethoxysilyl)propyl]disulfide, 90% (TESPDS),
- (x.) Cysteamine,
- (xi.) 3-Aminopropanethiol,
- (xii.) Aminoethylaminopropyl/methylsilsesquioxane, in aqueous solution,
- (xiii.) Aminopropylsilsesquioxane in aqueoussolution (APS),
- (xiv.) (2-Diethylphosphatoethyltriethoxysilane),
- (xv.) (2-Diethylphosphatoethyl)methyldiethoxysilane,
- (xvi.)N-(2-Aminoethyl)-3-Aminopropyltriethoxysilane,
- (xvii.) (3-(M-AMINOPHENOXY) PROPYLTRIMETHOXYSILANE,
- (xviii.)N-(2-Aminoethyl)-3-Aminopropylmethyldimethoxysilane,
- (xix.)N-(2-Aminoethyl)-3-Aminoisobutylmethyldimethoxysilane,
- (xx.)N-(2-Aminoethyl)-3-Aminoisobutyldimethylmethoxysilane,
- (xxi.) 4-Aminobutyltriethoxysilane,
- (xxii.) (Aminoethylaminomethyl)Phenethyltrimethoxysilane,
- (xxiii.)N-(2-Aminoethyl)-3-Aminopropylmethyldiethoxysilane,
- (xxiv.)N-(2-Aminoethyl)-11-Aminoundecyltrimethoxysilane,
- (xxv.)N-(6-Aminohexyl)Aminopropyltrimethoxysilane,
- (xxvi.)N-(6-Aminohexyl)Aminopropyltrimethoxysilane,
- (xxvii.) m-AMINOPHENYLTRIMETHOXYSILANE, or
- (xxviii.) m-AMINOPHENYLTRIMETHOXYSILANE;
- and
- after treating the surface of the metal structure, coating the treated surface with an organic material, wherein the metal-organic interface between the treated surface of the metal structure and the coated organic layer has improved adhesion.
29 more elements
A method of improving the adhesion of a metal-organic interface in an electronic device, comprising:
- providing a substrate with a copper interconnect structure;
- treating a surface of the copper interconnect structure with a vapor of a silane composition having a boiling point below about 250° C. at a pressure between about 0.1-10 Torr to deposit a silane mono-layer on the copper interconnect structure, wherein the silane composition includes at least one of
- (i.)N-(2-Aminoethyl)-3-aminopropyltrimethoxysilane (AE-APTMS),
- (ii.) N,N′-Bis[(3-trimethoxysilyl)propyl]ethylenediamine (TMSP-ED),
- (iii.) Bis(3-Trimethoxysilylpropyl)amine, (TMSPA),
- (iv.) 3-Mercaptopropyltrimethoxysilane (MPTMS),
- (v.)N-(2-Aminoethyl)-3-aminopropylsilanetriol, 25% in water (AE-APST),
- (vi.) 3-Thiocyanatopropyltriethoxysilane, 92% (TCPTES),
- (vii.)N-(6-Aminohexyl)aminomethyl trimethoxysilane,
- (viii.) 1,3-Bis(3-aminopropyl)tetramethyldisiloxane,
- (ix.) Bis[3-(triethoxysilyl)propyl]disulfide, 90% (TESPDS),
- (x.) Cysteamine,
- (xi.) 3-Aminopropanethiol,
- (xii.) Aminoethylaminopropyl/methylsilsesquioxane, in aqueous solution,
- (xiii.) Aminopropylsilsesquioxane in aqueoussolution (APS),
- (xiv.) (2-Diethylphosphatoethyltriethoxysilane),
- (xv.) (2-Diethylphosphatoethyl)methyldiethoxysilane,
- (xvi.)N-(2-Aminoethyl)-3-Aminopropyltriethoxysilane,
- (xvii.) (3-(M-AMINOPHENOXY) PROPYLTRIMETHOXYSILANE,
- (xviii.)N-(2-Aminoethyl)-3-Aminopropylmethyldimethoxysilane,
- (xix.)N-(2-Aminoethyl)-3-Aminoisobutylmethyldimethoxysilane,
- (xx.)N-(2-Aminoethyl)-3-Aminoisobutyldimethylmethoxysilane,
- (xxi.) 4-Aminobutyltriethoxysilane,
- (xxii.) (Aminoethylaminomethyl)Phenethyltrimethoxysilane,
- (xxiii.)N-(2-Aminoethyl)-3-Aminopropylmethyldiethoxysilane,
- (xxiv.)N-(2-Aminoethyl)-11-Aminoundecyltrimethoxysilane,
- (xxv.)N-(6-Aminohexyl)Aminopropyltrimethoxysilane,
- (xxvi.)N-(6-Aminohexyl)Aminopropyltrimethoxysilane,
- (xxvii.) m-AMINOPHENYLTRIMETHOXYSILANE, or
- (xxviii.) m-AMINOPHENYLTRIMETHOXYSILANE;
- and
- after treating the surface of the copper interconnect structure, coating the treated surface with an organic material, wherein the metal-organic interface between the treated surface of the copper interconnect structure and the coated organic material has improved adhesion.
29 more elements
A method of improving the adhesion of a metal-organic interface in an electronic device, comprising:
- providing a substrate with a copper interconnect structure;
- depositing a mono-layer of a silane composition on a surface of the copper interconnect structure by vapor phase deposition, wherein the silane composition includes (a) at least a primary amine group or a secondary amine group and at least one alkoxysilyl group, (b) the alkoxysilyl group may be one of ethoxy, methoxy, butoxy, propoxy, or isopropoxy, (c) the alkoxysilyl group may have between one and three alkoxy groups attached, and (d) a boiling point below about 250° C. at a pressure between about 0.1-10 Torr;
- and
- depositing an organic material on the surface of the copper interconnect structure after depositing the mono-layer of the silane composition, wherein the metal-organic interface between the copper interconnect structure and the deposited organic material has improved adhesion.
1 more element
Dependencies are inferred from the claim text.