Hamming weight calculation method based on operation apparatus
AssigneeHuawei Technologies Co., Ltd.
InventorsYi Li, Jiancong Li, Xiangshui Miao, Peng Yan, Guiyou Pu, Xiaozhong Shi, Keji Huang
Life of this patent
Estimating the term…
Loading patent…
AssigneeHuawei Technologies Co., Ltd.
InventorsYi Li, Jiancong Li, Xiangshui Miao, Peng Yan, Guiyou Pu, Xiaozhong Shi, Keji Huang
Estimating the term…
The present application discloses a Hamming weight calculation method performed by an operation apparatus. The operation apparatus includes a controller and a first calculator, wherein the controller sets an initial resistance state of the first memory to a low resistance state; determines a first gate voltage of the first transistor based on first bit data in a first binary sequence, and control an on-off state of the first transistor based on the first gate voltage; controls a target resistance state of the first memory based on the on-off state of the first transistor; and determines a Hamming weight of the first bit data based on a first output current on the source of the first transistor.
A Hamming weight calculation method performed by an operation apparatus, wherein the operation apparatus comprises a controller and a first calculator, the controller is in signal connection with the first calculator, the first calculator comprises a first memory and a first transistor, a drain of the first transistor is connected to a negative electrode of the first memory, and a source of the first transistor is grounded;
A controller, wherein the controller is in signal connection with a first calculator, the first calculator comprises a first memory and a first transistor, a drain of the first transistor is connected to a negative electrode of the first memory, and a source of the first transistor is grounded;
An operation apparatus, comprising a controller and a first calculator, wherein the controller is in signal connection with the first calculator, the first calculator comprises a first memory and a first transistor, a drain of the first transistor is connected to a negative electrode of the first memory, and a source of the first transistor is grounded;
Dependencies are inferred from the claim text.