Array substrate, digital x-ray detector including the same, and method for manufacturing the same
AssigneeLG Display Co., Ltd.
InventorsJaeho Yoon, Donghyeon Jang, Shihyung Park, Moonsoo Kang, Donghwan Lee
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Abstract
A lower electrode of a PIN diode and a second protective layer covering the PIN diode are formed not using separate mask processes, but using the same mask process using the same mask, thereby reducing the number of mask processes and thus increasing process efficiency. Further, the lower electrode of the PIN diode is patterned and then the second protective film covering the PIN diode is patterned such that both the former patterning and the latter patterning are carried out using a single mask process, thereby reduce increase in defects due to foreign materials or stains.
Claims18
A method for manufacturing an array substrate for a digital X-ray detector, the method comprising:
- providing a base substrate having an active area and a pad area;
- forming a thin-film transistor on the base substrate and in the active area;
- forming a first protective layer on the base substrate so as to cover the thin-film transistor;
- forming a lower electrode film on the first protective layer;
- forming a PIN (P-type/I-type/N-type semiconductors) layer and an upper electrode on the lower electrode film and in the active area;
- forming a second protective film on the lower electrode film so as to cover the PIN layer and the upper electrode;
- and
- patterning the second protective film to form a second protective layer, and patterning the lower electrode film to form a lower electrode in the active area after patterning the second protective film,
- wherein the second protective film and the lower electrode film are patterned using the same mask process.
An array substrate for a digital X-ray detector, the array substrate comprising:
- a base substrate having an active area and a pad area;
- a thin-film transistor disposed on the base substrate and in the active area;
- a first protective layer covering the thin-film transistor and disposed in the active area and the pad area;
- a PIN diode electrically connected to the thin-film transistor and disposed on the first protective layer and in the active area;
- and
- a second protective layer covering the PIN diode and disposed in the active area and the pad area,
- wherein the second protective layer does not contact the first protective layer,
- wherein the PIN diode includes a lower electrode, a PIN layer and an upper electrode, and
- wherein the second protective layer is in contact with a part of the upper surface of the lower electrode and the second protective layer does not cover a side face of the lower electrode.
Dependencies are inferred from the claim text.