Rapid thermal processing method and rapid thermal processing device

A rapid thermal processing device, comprising:

• a carrier platform configured for placing a wafer;
• a heating device arranged below the carrier platform and configured to:
• perform a first heating operation on the wafer to heat the wafer to a first temperature and maintain the first temperature for a first predetermined time, perform a second heating operation on the wafer to heat the wafer from the first temperature to a second temperature and maintain the second temperature for a second predetermined time, and perform a third heating operation on the wafer to heat the wafer from the second temperature to a third temperature and maintain the third temperature for a third predetermined time;
• and
• a rotating device configured to control the wafer to start rotating when the wafer is heated to the first temperature,
• wherein the heating device is further configured to maintain the first temperature for a fourth predetermined time before the wafer is controlled to start rotating;
• and
• wherein the rapid thermal processing device further comprises a driving device configured to move the wafer towards the heating device during the fourth predetermined time.

A rapid thermal processing method, comprising:

• providing a wafer;
• performing a first heating operation on the wafer to heat the wafer to a first temperature;
• controlling the wafer to start rotating;
• maintaining the first temperature for a first predetermined time;
• performing a second heating operation on the wafer to heat the wafer from the first temperature to a second temperature, and maintaining the second temperature for a second predetermined time;
• and
• performing a third heating operation on the wafer to heat the wafer from the second temperature to a third temperature, and maintaining the third temperature for a third predetermined time,
• wherein providing the wafer comprises placing the wafer on an annular carrier platform, the wafer comprising a peripheral area in contact with the annular carrier platform and an internal area exposed from a middle portion of the annular carrier platform;
• and
• wherein the first heating operation, the second heating operation, and the third heating operation are performed by a heating device arranged below the annular carrier platform and comprising a plurality of heating components, wherein a heating temperature of one or more of the plurality of heating components arranged below the internal area of the wafer is greater than a heating temperature of one or more of the plurality of heating components arranged below the peripheral area of the wafer.