Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material

A cyclic deposition process for forming a metal-containing material, the cyclic deposition process comprising:

• providing a first gas-phase precursor from a first gas-phase reactant source vessel in fluid communication with a reaction chamber to the reaction chamber to form a first metal species, the first gas-phase precursor comprising a metal compound having a formula:
• (adduct)n-M-Xa, where each adduct is an adduct forming ligand, where M is a first metal comprising a group 3-group 12 metal, where n is from 1 to 4, where X is a halide or other ligand and where a is from 1 to 4;
• and
• providing a second gas-phase reactant comprising a compound having a general formula of R-M-H, wherein R is an organic group and M is a second metal, to react with the first metal species to thereby form the metal-containing material.