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US 11,810,993 B2Granted
Solar cell, multi-junction solar cell, solar cell module, and photovoltaic power generation system
AssigneesKabushiki Kaisha Toshiba, Toshiba Energy Systems & Solutions Corporation
InventorsKazushige Yamamoto, Soichiro Shibasaki, Mutsuki Yamazaki, Naoyuki Nakagawa, Sara Yoshio
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Abstract
A solar cell of an embodiment includes a p-electrode, a p-type light-absorbing layer directly in contact with the p-electrode, an n-type layer, and an n-electrode. The n-type layer is disposed between the p-type light-absorbing layer and the n-electrode. A region from an interface between the p-type light-absorbing layer and the p-electrode to 10 nm to 100 nm from the interface in a direction of the n-type layer is a p+ type region including a p-type dopant.
Claims15
A solar cell comprising:
- a p-electrode;
- a p-type light-absorbing layer directly in contact with the p-electrode;
- an n-type layer;
- and
- an n-electrode, wherein
- the n-type layer is disposed between the p-type light-absorbing layer and the n-electrode, and
- a region in the p-type light absorbing layer from an interface between the p-type light-absorbing layer and the p-electrode toward the n-type layer is a p+ type region including a p-type dopant with a depth of 30 nm to 70 nm,
- wherein the p-type light-absorbing layer is a semiconductor layer made of an oxide of metal containing Cu,
- a maximum concentration of the p-type dopant in the p+ type region is 5.0×1019 atoms/cm3 or more and 1.0×1021 atoms/cm3 or less,
- an average concentration of the p-type dopant in the p+ type region is 1.0×1019 atoms/cm3 or more and 1.0×1020 atoms/cm3 or less;
- and
- the p-type dopant includes Si.
9 more elements
Dependencies are inferred from the claim text.