Magnonic magneto-resistance device including two-dimensional spacer and electronic equipment comprising the same
AssigneeInstitute of Physics, Chinese Academy of Sciences
InventorsXiufeng Han, Yaowen Xing
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Abstract
The present disclosure relates to a magnonic magnetoresistance (MMR) device and an electronic equipment including the same. According to one embodiment, a core structure of a MMR device may include: a first ferromagnetic insulating layer (Ferro-magnetic Insulator, FMI1); a two-dimensional conductive material layer (Spacer) set on the first ferromagnetic insulating layer; and a second ferromagnetic insulating layer (Ferro-magnetic Insulator, FMI2) set on the two-dimensional conductive material layer. The MMR device of the present disclosure may enhance interface effect in spin electron transmission and thus improve performance of the MMR device.
Claims10
A magnonic magnetoresistance (MMR) device, comprising:
- a first ferromagnetic insulating layer;
- a two-dimensional conductive material layer set on the first ferromagnetic insulating layer;
- and
- a second ferromagnetic insulating layer set on the two-dimensional conductive material layer,
- wherein each of the first ferromagnetic insulating layer and the second ferromagnetic insulating layer comprises one or more of the following materials:
- R3Fe5O12, MFe2O4, BaFe12O19, and SrFe12O19, and their doped compounds, wherein R is Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu, an M is Mn, Zn, Cu, Ni, Mg or Co.
Dependencies are inferred from the claim text.