Method and device for ultraviolet to long wave infrared multiband semiconducting single emitter

A semiconductor light-emitting device, comprising:

• a transistor element including a collector region, an emitter region, and a base region;
• a first electrode coupled to the collector region, a second electrode coupled to the base region, and a third electrode coupled to the emitter region;
• a quantum cascade region disposed between the base and collector regions of the transistor element and quantum well structures disposed within the emitter region, wherein the quantum well structures of the emitter region are configured to produce interband-based light emission in a first wavelength band that includes ultraviolet (UV) radiation wavelengths, and the quantum cascade region is configured to produce intraband-based light emission in a second wavelength band that includes one or more from a group of infrared radiation (IR) wavelengths and terahertz (THz) radiation wavelengths;
• a waveband controller connected to the first and second electrodes and configured to apply a first electrical signal via the first and second electrodes with respect to the collector and base regions to control a base-collector junction bias level and select between first and second base-collector bias levels, wherein selection of the first base-collector bias level causes the emitter region to produce the interband-based light emission having a first wavelength of the first wavelength band, wherein selection of the second base-collector bias level causes the quantum cascade region to produce the intraband-based light emission having a second wavelength of the second wavelength band;
• and
• a modulator connected to the second and third electrodes and configured to apply a second electrical signal via the second and third electrodes with respect to the base and emitter regions to independently modulate pulse characteristics of the intraband-based light emission and the interband-based light emission produced based on the first electrical signal.

A method for generating light emission, the method comprising:

• providing a transistor element including a collector region, an emitter region, a base region, a quantum cascade region between the base and collector regions, and quantum well structures within the base or emitter regions, wherein the quantum well structures are configured to produce interband-based light emission in a first wavelength band that includes ultraviolet (UV) radiation wavelengths, and the quantum cascade region is configured to produce intraband-based light emission in a second wavelength band that includes one or more from a group of infrared (IR) radiation wavelengths and terahertz (THz) radiation wavelengths;
• applying, by a waveband controller via first and second electrodes with respect to the collector and base regions, a first electrical signal to control a base-collector junction bias level and select between first and second base-collector bias levels, wherein selection of the first base-collector bias level causes at least one of the emitter region and the base region to produce the interband-based light emission having a first wavelength of the first wavelength band, wherein selection of the second base-collector bias level causes the quantum cascade region to produce the intraband-based light emission having a second wavelength of the second wavelength band;
• and
• applying, by a modulator via the second electrode and a third electrode with respect to the base and emitter regions, a second electrical signal to independently modulate pulse characteristics of the intraband-based light emission and the interband-based light emission produced based on the first electrical signal;
• wherein the transistor element comprises a multi-layer stack of antireflective coatings, wherein first and second adjacent layers of the multi-layer stack have a thickness corresponding to the second wavelength and third and fourth adjacent layers of the multi-layer stack have a thickness corresponding to the first wavelength, and wherein the first and third layers include a material with a first refractive index and the second and fourth layers include a material with a second refractive index less than the first refractive index.