Solar cell, manufacturing method thereof, and photovoltaic module

A method for manufacturing a solar cell, comprising:

• performing boron diffusion on a front surface of an N-type semiconductor substrate after the N-type semiconductor substrate is textured, to form a boron diffusion layer;
• forming an oxide layer containing nitrogen and phosphorus on a rear surface of the N-type semiconductor substrate;
• depositing a polysilicon layer on a surface of the oxide layer containing nitrogen and phosphorus, and performing secondary phosphorus diffusion on the polysilicon layer, to form a phosphorus-doped polysilicon layer;
• forming a second passivation layer on a surface of the phosphorus-doped polysilicon layer;
• forming a first passivation layer on a surface of the boron diffusion layer, and forming a first electrode by passing through the first passivation layer to be electrically connected to the boron diffusion layer;
• and
• forming a second electrode by passing through the second passivation layer to be electrically connected to the phosphorus-doped polysilicon layer,
• wherein the oxide layer comprises a first oxide sub-layer, a second oxide sub-layer, and a third oxide sub-layer, wherein the first oxide sub-layer is a nitrogen-doped silicon oxide layer, the second oxide sub-layer is made of silicon dioxide, and the third oxide sub-layer is a phosphorus-doped silicon oxide layer.

A photovoltaic module, comprising a plurality of solar cell strings, wherein each of the plurality of solar cell strings comprises a plurality of solar cells, and at least one of the plurality of solar cells comprises:

• an N-type semiconductor substrate having a front surface and a rear surface opposite to the front surface;
• a boron diffusion layer arranged on the front surface of the N-type semiconductor substrate, wherein:
• a first passivation layer is provided on a surface of the boron diffusion layer, and a first electrode is provided passing through the first passivation layer to form an electrical connection with the N-type semiconductor substrate;
• and
• a phosphorus-doped polysilicon layer arranged on the rear surface of the N-type semiconductor substrate, wherein a silicon oxide layer containing nitrogen and phosphorus is provided between the rear surface of the N-type semiconductor substrate and the phosphorus-doped polysilicon layer, a second passivation layer is provided on a surface of the phosphorus-doped polysilicon layer, and a second electrode is provided passing through the second passivation layer to form an electrical connection with the phosphorus-doped polysilicon layer,
• wherein the silicon oxide layer comprises a first oxide sub-layer, a second oxide sub-layer, and a third oxide sub-layer, wherein the first oxide sub-layer is a nitrogen-doped silicon oxide layer, the second oxide sub-layer is made of silicon dioxide, and the third oxide sub-layer is a phosphorus-doped silicon oxide layer.