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US 11,802,350 B2Granted
Layered GaAs, method of preparing same, and GaAs nanosheet exfoliated from same
AssigneeIndustry-Academic Cooperation Foundation, Yonsei University
InventorsWoo Young Shim, Sang jin Choi, Hyesoo Kim
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Abstract
The present invention relates to: layered gallium arsenide (GaAs), which is more particularly layered GaAs, which, unlike the conventional bulk GaAs, has a two-dimensional crystal structure, has the ability to be easily exfoliated into nanosheets, and exhibits excellent electrical properties by having a structure that enables easy charge transport in the in-plane direction; a method of preparing the same; and a GaAs nanosheet exfoliated from the same.
Claims5
A method of preparing layered GaAs, the method comprising:
- step (1) of heat-treating a mixture including K or Na powder, Ga powder, and As powder and cooling the mixture, thereby obtaining a layered compound having a monoclinic crystal structure with the P21/c space group and represented by the chemical formula K2Ga2As3 or the chemical formula Na2Ga2As3;
- and
- step (2) of treating the layered compound with a mixed solution containing a salt capable of selectively removing K ions or Na ions contained in the layered compound and a solvent capable of dissolving the salt, thereby obtaining layered GaAs having a crystalline or an amorphous structure.
Dependencies are inferred from the claim text.