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US 11,802,085 B2Granted
Composite structure and semiconductor manufacturing apparatus including composite structure
AssigneeToto Ltd.
InventorsHiroaki Ashizawa, Ryoto Takizawa
Life of this patent
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Abstract
Disclosed is to provide a composite structure used as a member for a semiconductor manufacturing apparatus with which low-particle generation can be improved, as well as a semiconductor manufacturing apparatus including the same. A composite structure including a base material and a structure that is provided on the base material and has a surface, in which the structure comprises Y3Al5O12 as a main component, and has an indentation hardness being larger than 8.5 GPa features excellent low-particle generation and is suitably used as a member for a semiconductor apparatus.
Claims14
A composite structure comprising:
- a base material;
- and a structure provided on the base material and has a surface,
- wherein the structure comprises Y3Al5O12 as a main component, and has an indentation hardness being larger than 8.5 GPa where the indentation hardness is measured by performing nano indentation on the surface of the structure with a Berkovich indenter used as an indenter, and with an indentation depth being a fixed value of 200 nm,
- wherein an average crystallite size of the structure is less than 50 nm.
1 more element
Dependencies are inferred from the claim text.