Hollow cathode, an apparatus including a hollow cathode for manufacturing a semiconductor device, and a method of manufacturing a semiconductor device using a hollow cathode

A method of manufacturing a semiconductor device, the method comprising:

• obtaining a measurement of etch uniformity of a substrate by detecting differences in etch rate depending on locations on the substrate;
• determining positions of bottom electrodes and top electrodes of a hollow cathode that are configured to be individually supplied with a source power and a bias power according to the detected differences in etch rate depending on locations on the substrate;
• providing a reaction gas on the top electrodes;
• and
• locally generating a plasma on the substrate by selectively providing the source power and the bias power to the bottom electrodes and the top electrodes based on the differences in etch rate depending on locations on the substrate,
• wherein the hollow cathode further comprises an insulation plate provided between the bottom electrodes and the top electrodes, the hollow cathode having cathode holes,
• wherein the bottom electrodes have first holes, the bottom electrodes arranged in a straight line,
• wherein the top electrodes have second holes aligned with the first holes, the top electrodes arranged in a circle shape different from the straight line, and
• wherein the cathode holes and the first and second holes are disposed at intersections of the bottom electrodes and the top electrodes.

A method of manufacturing a semiconductor device, the method comprising:

• obtaining a measurement of etch uniformity of a substrate by detecting differences in etch rate depending on locations on the substrate;
• determining positions of bottom electrodes and top electrodes of a hollow cathode that are configured to be individually supplied with a source power and a bias power according to the detected differences in etch rate depending on locations on the substrate;
• and
• locally generating a plasma on the substrate by selectively providing the source power and the bias power to the bottom electrodes and the top electrodes based on the differences in etch rate depending on locations on the substrate,
• wherein the hollow cathode further comprises an insulation plate provided between the bottom electrodes and the top electrodes, the hollow cathode having cathode holes,
• wherein the top electrodes comprise:
• an edge ring;
• a center ring disposed in the edge ring;
• and
• a middle ring disposed between the center ring and the edge ring.