Thermal temperature sensors for power amplifiers
AssigneeAnalog Devices, Inc.
InventorKeith E. Benson
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Abstract
Thermal temperature sensors for power amplifiers are provided herein. In certain implementations, a semiconductor die includes a compound semiconductor substrate, and a power amplifier including a plurality of field-effect transistors (FETs) configured to amplify a radio frequency (RF) signal. The plurality of FETs are arranged on the compound semiconductor substrate as a transistor array. The semiconductor die further includes a semiconductor resistor configured to generate a signal indicative of a temperature of the transistor array. The semiconductor resistor is located adjacent to one end of the transistor array.
Claims20
A semiconductor die with thermal temperature sensing, the semiconductor die comprising:
- a compound semiconductor substrate;
- a power amplifier including a plurality of field-effect transistors (FETs) configured to receive a radio frequency (RF) input signal, and amplify the RF input signal to generate an RF output signal, wherein the plurality of FETs are arranged on the compound semiconductor substrate as a transistor array;
- and
- a high temperature coefficient (TC) resistor configured to generate a signal indicative of a temperature of the transistor array,
- wherein the high TC resistor is located adjacent to one end of the transistor array.
A power amplifier comprising:
- a plurality of field-effect transistors (FETs) configured to receive a radio frequency (RF) input signal, and amplify the RF input signal to generate an RF output signal, wherein the plurality of FETs are arranged as a transistor array;
- and
- a high temperature coefficient (TC) resistor configured to generate a signal indicative of a temperature of the transistor array;
- wherein the high TC resistor is located adjacent to one end of the transistor array.
Dependencies are inferred from the claim text.