Transistor, gate drive circuit and display device

A gate drive circuit comprising:

• a plurality of cascaded shift registers, wherein each shift register comprises a transistor comprising a first insulation layer and at least one switch region, wherein the switch region comprises a gate structure, a first function layer and a second function layer;
• a thickness direction of the first insulation layer is in an x direction, and the first function layer and the second function layer are respectively disposed on each side of the first insulation layer in the x direction;
• wherein the first function layer comprises a first semiconductor layer, a first source disposed in a source region of the first semiconductor layer, and a first drain disposed in a drain region of the first semiconductor layer;
• wherein the second function layer comprises a second semiconductor layer, a second source disposed in a source region of the second semiconductor layer, and a second drain disposed in a drain region of the second semiconductor layer;
• the second source is connected to the first source by means of a first connection line passing through the first insulation layer, and the second drain is connected to the first drain by means of a second connection line passing through the first insulation layer;
• and
• wherein the gate structure is respectively disposed to be insulated from the first semiconductor layer and the second semiconductor layer, and is disposed opposite to channel regions of the first semiconductor layer and the second semiconductor layer.

A display device comprising:

• a display panel and a gate drive circuit wherein the display panel comprises a display region and a non-display region, and the gate drive circuit is disposed in the non-display region;
• and the gate drive circuit comprises a transistor comprising a first insulation layer and at least one switch region, wherein the switch region comprises a gate structure, a first function layer and a second function layer;
• the thickness direction of the first insulation layer is in an x direction, and the first function layer and the second function layer are respectively disposed on each side of the first insulation layer in the x direction;
• wherein the first function layer comprises a first semiconductor layer, a first source disposed in a source region of the first semiconductor layer, and a first drain disposed in a drain region of the first semiconductor layer;
• wherein the second function layer comprises a second semiconductor layer, a second source disposed in a source region of the second semiconductor layer, and a second drain disposed in a drain region of the second semiconductor layer;
• the second source is connected to the first source by means of a first connection line passing through the first insulation layer, and the second drain is connected to the first drain by means of a second connection line passing through the first insulation layer;
• and
• wherein the gate structure is respectively disposed to be insulated from the first semiconductor layer and the second semiconductor layer, and is disposed opposite to channel regions of the first semiconductor layer and the second semiconductor layer.