SNSPD with integrated aluminum nitride seed or waveguide layer
AssigneeApplied Materials, Inc.
InventorsZihao Yang, Mingwei Zhu, Nag B. Patibandla, Nir Yahav, Robert Jan Visser, Adi de la Zerda
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Abstract
A superconducting nanowire single photon detector (SNSPD) device includes a substrate, a distributed Bragg reflector on the substrate, a seed layer of a metal nitride on the distributed Bragg reflector, and a superconductive wire on the seed layer. The distributed Bragg reflector includes a plurality of bi-layers, each bi-layer including lower layer of a first material and an upper layer of a second material having a higher index of refraction than the first material. The wire is a metal nitride different from the metal nitride of the seed material.
Claims20
A superconducting nanowire single photon detector (SNSPD) device, comprising:
- a substrate;
- a distributed Bragg reflector on the substrate, the distributed Bragg reflector comprising a plurality of bi-layers, each bi-layer including lower layer of a first material and an upper layer of a second material having a higher index of refraction than the first material;
- a seed layer of a metal nitride on and in direct contact with the distributed Bragg reflector;
- and
- a superconductive wire on and in direct contact with the seed layer, the superconductive wire being a metal nitride different from the metal nitride of the seed layer, and wherein the metal nitride of the seed layer increases a critical temperature of the metal nitride of the superconductive wire.
A superconducting nanowire single photon detector (SNSPD) device, comprising:
- a substrate;
- a distributed Bragg reflector on the substrate, the distributed Bragg reflector comprising a plurality of bi-layers, each bi-layer including lower layer of aluminum nitride and an upper layer of a different material having a higher index of refraction than the aluminum nitride;
- a seed layer of aluminum nitride on and in direct contact with the distributed Bragg reflector;
- and
- a superconductive wire on and in direct contact with the seed layer, the superconductive wire being niobium nitride, and wherein the aluminum nitride of the seed layer increases a critical temperature of the niobium nitride of the superconductive wire.
Dependencies are inferred from the claim text.