High output power density radio frequency transistor amplifiers in flat no-lead overmold packages
AssigneeWolfspeed, Inc.
InventorsPhil Saint-Erne, William Pribble, Warren Brakensiek, Bradley Millon
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Abstract
Packaged RF transistor amplifiers are provided that include a flat no-lead overmold package that includes a die pad, a plurality of terminal pads and an overmold encapsulation that at least partially covers the die pad and the terminal pads and an RF transistor amplifier die mounted on the die pad and at least partially covered by the overmold encapsulation. These packaged RF transistor amplifiers may have an output power density of at least 3.0 W/mm2.
Claims22
A packaged radio frequency (“RF”) transistor amplifier, comprising:
- a flat no-lead overmold package that includes a die pad, a plurality of terminal pads and an overmold encapsulation that at least partially covers the die pad and the terminal pads;
- and
- an RF transistor amplifier die mounted on the die pad and at least partially covered by the overmold encapsulation,
- wherein the RF transistor amplifier die includes at least one RF transistor amplifier circuit that comprises a gate-drain-gate spacing of less than 45 microns.
A packaged radio frequency (“RF”) transistor amplifier, comprising:
- a flat no-lead package that includes a die pad, a plurality of terminal pads and an overmold encapsulation that at least partially covers the die pad and the terminal pads;
- and
- a monolithic microwave integrated circuit (“MMIC”) RF transistor amplifier die mounted on the die pad and at least partially covered by the overmold encapsulation,
- wherein a surface area of the flat no lead package is less than 80 mm2 and an output power of the packaged RF transistor amplifier is at least 200 Watts.
A packaged radio frequency (“RF”) transistor amplifier, comprising:
- a flat no-lead package that includes a die pad, a plurality of terminal pads and an overmold encapsulation that at least partially covers the die pad and the terminal pads;
- and
- an RF transistor amplifier die mounted on the die pad, wherein an upper surface and side surfaces of the RF transistor amplifier die are covered by the overmold encapsulation,
- wherein the RF transistor amplifier die includes at least one RF transistor amplifier circuit having a gate-drain-gate spacing of less than 45 microns, and
- wherein an output power density rating of the packaged RF transistor amplifier is at least 3.5 W/mm2.
Dependencies are inferred from the claim text.