Nano memory device
AssigneeSouth Dakota Board of Regents
InventorsCharles Tolle, Haiping Hong, Christian Widener, Greg Christensen, Jack Yang
Life of this patent
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Abstract
A non-volatile memory circuit in embodiments of the present invention may have one or more of the following features: (a) a logic source, and (b) a semi-conductive device being electrically coupled to the logic source, having a first terminal, a second terminal and a nano-grease with significantly reduced amount of carbon nanotube loading located between the first and second terminal, wherein the nano-grease exhibits non-volatile memory characteristics.
Claims20
A non-volatile memory circuit, comprising:
- a nano-grease located between terminals of the non-volatile memory circuit, wherein the nano-grease exhibits non-volatile memory characteristics.
A non-volatile memory circuit, comprising:
- a nano-grease located between a first and second terminal of a logic source, wherein the nano-grease exhibits non-volatile memory characteristics.
A method for a non-volatile memory circuit, comprising:
- disposing a nano-grease between circuit terminals, wherein the nano-grease exhibits non-volatile memory characteristics.
Dependencies are inferred from the claim text.