Selective encapsulation for metal electrodes of embedded memory devices

A method for encapsulating an electrode of a memory device, the method comprising:

• forming an insulating layer, the insulating layer having a substantially uniform thickness and comprising a first portion formed on and in direct contact with an underlying metallization layer and further having a second portion formed over and in direct contact with both a memory device and an electrode in contact with the memory device;
• while the first portion and the second portion of the insulating layer are exposed, etching the second portion of the insulating layer, the etching exposing a top-most surface of the electrode and a portion of sidewalls of the electrode, wherein the top-most surface of the electrode is substantially parallel to the underlying metallization layer and the sidewalls of the electrode are substantially normal to the underlying metallization layer;
• and
• forming a metal encapsulation layer over and in contact with the top-most surface of the electrode and the portion of the sidewalls of the electrode such that sidewalls of the metal encapsulation layer and exposed sidewalls of remaining portions of the insulating layer are coplanar.