Method and apparatus for deposition of multilayer device with superconductive film

A physical vapor deposition system, comprising:

• chamber walls forming a chamber;
• a first target support to hold a first target, a second target support to hold a second target, and a third target support to hold a third target in an upper portion of the chamber;
• a movable shield positioned in the chamber and having an opening therethrough;
• an actuator to move the shield;
• a workpiece support to hold a workpiece in a lower portion of the chamber;
• a vacuum pump to evacuate the chamber;
• a gas source to deliver nitrogen gas and an inert gas to the chamber;
• a power source to selectively apply power to the first target, the second target or the third target;
• and
• a controller configured to
• cause the actuator to move the shield to position the opening adjacent the first target, cause the gas source to flow a first gas into the chamber, and cause the power source to apply power sufficient to ignite a plasma in the chamber to cause deposition of a buffer layer of a first material on the workpiece on the workpiece support,
• cause the actuator to move the shield to position the opening adjacent the second target, cause the gas source to flow a second gas into the chamber, and cause the power source to apply power sufficient to ignite a plasma in the chamber to cause deposition of a device layer of a second material that is a metal nitride suitable for use as a superconductor at temperatures above 8° K on the buffer layer, the first material being different composition from the second material,
• cause the actuator to move the shield to position the opening adjacent the third target, cause the gas source to flow a third gas into the chamber, and cause the power source to apply power sufficient to ignite a plasma in the chamber to cause deposition of a capping layer of a third material on the device layer, the third material being different composition from the first and second materials.