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US 11,778,924 B2Granted
Magnetic device and magnetic random access memory
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMingYuan Song, Shy-Jay Lin, William J. Gallagher, Hiroki Noguchi
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Abstract
A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a selector layer coupled to the first terminal.
Claims20
A magnetic memory, comprising:
- a first word line;
- a second word line;
- a third word line, a bit line;
- a first source line;
- a second source line;
- a first memory cell;
- and a second memory cell,
- wherein each of the first and second memory cells includes:
- a magnetic tunnel junction (MTJ) stack;
- a spin-orbit torque (SOT) induction wiring coupled to one end of the MTJ stack;
- a first terminal coupled to a first end of the SOT induction wiring;
- a second terminal coupled to a second end of the SOT induction wiring;
- a third terminal coupled to another end of the MTJ stack;
- a selector layer coupled to the first terminal and the third word line;
- and
- a switching transistor having a drain coupled to the third terminal and a source coupled to the bit line,
- the second terminal of the first memory cell is coupled to the first source line and the second terminal of the second memory cell is coupled to the second source line, and
- a gate of the switching transistor of the first memory cell is coupled to the first word line, and a gate of the switching transistor of the second memory cell is coupled to the second word line.
15 more elements
A method of operating a magnetic memory device, wherein the magnetic memory device comprises:
- a first word line;
- a bit line;
- a second word line;
- a source line;
- and a memory cell,
- wherein the memory cell includes:
- a magnetic tunnel junction (MTJ) stack;
- a spin-orbit torque (SOT) induction wiring coupled to one end of the MTJ stack;
- a first terminal coupled to a first end of the SOT induction wiring;
- a second terminal coupled to a second end of the SOT induction wiring and coupled to the source line;
- a third terminal coupled to another end of the MTJ stack;
- a selector layer coupled to the first terminal and coupled to the second word line;
- and
- a switching transistor coupled to the third terminal and the bit line, a gate of the switching transistor being coupled to the first word line,
- the method comprises
- wiring a first type data into the MTJ stack by:
- flowing a current from the source line to the second word line via the selector layer, while turning off the switching transistor.
14 more elements
A magnetic memory device, comprising:
- a switching transistor having a gate, a source and a drain;
- a magnetic tunnel junction (MTJ) stack coupled to the drain;
- a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack;
- a first terminal coupled to a first end of the SOT induction wiring;
- a second terminal coupled to a second end of the SOT induction wiring;
- and
- a selector layer coupled to the first terminal and disposed above the SOT induction wiring.
4 more elements
Dependencies are inferred from the claim text.