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US 11,778,920 B2Granted
Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsHui-Lin Wang, Po-Kai Hsu, Hung-Yueh Chen, Yu-Ping Wang
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Abstract
A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a cap layer adjacent to and directly contacting the MTJ, a first inter-metal dielectric (IMD) layer around the MTJ, a top electrode on the MTJ, a metal interconnection under the MTJ, and a second IMD layer around the metal interconnection. Preferably, the cap layer is a single layer structure made of dielectric material and an edge of the cap layer contacts the first IMD layer directly.
Claims5
A semiconductor device, comprising:
- a magnetic tunneling junction (MTJ) on a substrate;
- a cap layer adjacent to and directly contacting the MTJ, wherein the cap layer is a single layer structure made of dielectric material;
- and
- a first inter-metal dielectric (IMD) layer around the MTJ, wherein an edge of the cap layer contacts the first IMD layer directly and a top surface of the cap layer is even with a top surface of the first IMD layer.
1 more element
Dependencies are inferred from the claim text.