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US 11,778,918 B2Granted
Magnetic memory cell with low-resistive electrode via and method of forming same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsiang-Ku Shen, Liang-Wei Wang, Dian-Hau Chen
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Abstract
A method for manufacturing a memory device includes forming a via trench in a substrate and forming a via in the via trench. A lower portion of the via includes a first metal and an upper portion of the via includes a second metal that is different from the first metal. The method further includes forming a magnetic tunneling junction over the via and forming a top electrode over the magnetic tunneling junction.
Claims20
A method for manufacturing a memory device, comprising:
- forming a via trench in a substrate;
- forming a via in the via trench, wherein a lower portion of the via includes a first metal and an upper portion of the via includes a second metal that is different from the first metal;
- after the forming of the via, forming a bottom electrode on a to surface of the via;
- forming a magnetic tunneling junction on a top surface of the bottom electrode;
- and
- forming a top electrode over the magnetic tunneling junction.
3 more elements
A method of forming a memory device, comprising:
- providing a substrate;
- forming a via trench in the substrate;
- depositing a first metal in a lower portion of the via trench;
- depositing a second metal in an upper portion of the via trench, thereby forming a via in the via trench, wherein the second metal has a higher resistivity than the first metal;
- forming a bottom electrode layer over the via;
- forming a magnetic tunneling junction stack over the bottom electrode layer, wherein the magnetic tunneling junction stack includes a lower ferromagnetic layer, a tunneling barrier layer over the lower ferromagnetic layer, and an upper ferromagnetic layer over the tunneling barrier layer;
- and
- forming a top electrode layer over the magnetic tunneling junction stack.
5 more elements
A method, comprising:
- providing a substrate;
- forming a dielectric layer over the substrate;
- patterning the dielectric layer to form a trench exposing a top surface of the substrate;
- depositing a barrier layer on sidewalls of the trench and on the top surface of the substrate;
- depositing a first metal layer in a lower portion of the trench, wherein the first metal layer is essentially of copper;
- depositing a second metal layer in an upper portion of the trench, wherein the second metal layer is essentially of tungsten, wherein the barrier layer is in physical contact with sidewalls of the first metal layer and sidewalls of the second metal layer;
- forming a magnetic tunneling junction stack on the second metal layer;
- and
- forming a top electrode layer over the magnetic tunneling junction stack.
6 more elements
Dependencies are inferred from the claim text.