Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsChia-Wei Liu, Jia-Feng Fang, Chun-Hsien Lin
Life of this patent
Estimating the term…
Abstract
A method for fabricating semiconductor device includes the steps of forming a magnetic tunneling junction (MTJ) stack on a substrate, performing an etching process to remove the MTJ stack for forming a MTJ, performing a deposition process to form a polymer on a sidewall of the MTJ, and removing the polymer to form a rough surface on the sidewall of the MTJ. Preferably, the MTJ could include a pinned layer on the substrate, a barrier layer on the pinned layer, and a free layer on the barrier layer, in which the rough surface could appear on sidewall of the pinned layer, sidewall of the barrier layer, and/or sidewall of the free layer.
Claims7
A semiconductor device, comprising:
- a magnetic tunneling junction (MTJ) on a substrate, wherein a sidewall of the MTJ comprises a rough surface and the rough surface further comprises a wavy surface, and wherein the rough surface is formed by repeating a plurality of etching processes and a plurality of deposition processes and without performing a reactive ion etching (RIE) or an ion beam etching (IBE) process;
- a bottom electrode under the MTJ;
- and
- a top electrode on the MTJ, wherein sidewalls of the top electrode and the MTJ are different and a sidewall of the top electrode comprises a planar surface.
Dependencies are inferred from the claim text.