Organic gate TFT-type stress sensors and method of making and using the same

A thin-film transistor (TFT) stress sensor, comprising:

• a flexible substrate;
• an amorphous semiconductor channel layer formed on the flexible substrate;
• an organic material piezoelectric stress gate layer formed adjacent to the amorphous semiconductor channel layer;
• a plurality of source electrodes coupled to the organic material piezoelectric stress gate layer;
• a plurality of drain electrodes coupled to the organic material piezoelectric stress gate layer;
• a plurality of gate electrodes coupled to the organic material piezoelectric stress gate layer;
• and
• a plurality of transistors, wherein each transistor of the plurality of transistors includes at least a portion of the amorphous semiconductor channel layer, at least a portion of the organic material piezoelectric stress gate layer, a source electrode of the plurality of source electrodes, a drain electrode of the plurality of drain electrodes, and a gate electrode of the plurality of gate electrodes.

A method of forming a thin-film transistor (TFT) stress sensor, comprising:

• forming an amorphous semiconductor channel layer on a flexible substrate;
• forming an organic material piezoelectric stress gate layer adjacent to the amorphous semiconductor channel layer;
• forming a plurality of source electrodes coupled to the organic material piezoelectric stress gate layer, a plurality of drain electrodes coupled to the organic material piezoelectric stress gate layer, and a plurality of gate electrodes coupled to the organic material piezoelectric stress gate layer,
• wherein at least a portion of the amorphous semiconductor channel layer, at least a portion of the organic material piezoelectric stress gate layer, a source electrode of the plurality of source electrodes, a drain electrode of the plurality of drain electrodes, and a gate electrode are included in each transistor of a plurality of transistors.