Boron-containing organic light-emitting diode device and preparation method thereof

Abstract

Disclosed is an organic light-emitting diode device (OLED) structure, in particular to a high-efficiency organic light-emitting diode device comprising a boron-containing compound. The organic light-emitting diode device prepared by the present invention comprises: an anode, a hole injection or transport layer, a light-emitting layer, an electron injection or transport layer, and a cathode, wherein the light-emitting layer comprises a host material and a doping material, the host material can be composed of a single material or a mixture of materials with different structures; the doping material is a boron-containing organic compound with a singlet-triplet energy gap of not more than 0.2 eV; the singlet and triplet energy levels of the host material are higher than those of the doping material, which can prevent the energy return and avoid the reduction in the light emitting efficiency of the device. Further provided is a preparation method of the organic light-emitting diode device.

Dependencies are inferred from the claim text.