Photoelectric conversion element, solid-state imaging device, and electronic device

A photoelectric conversion element, comprising:

• a first electrode;
• a work function control layer that contains
• a hexavalent molybdenum oxide, a pentavalent molybdenum oxide, and a tetravalent molybdenum oxide, and
• an oxide containing molybdenum and at least one metal element different from the molybdenum,
• wherein the work function control layer has a larger amount of oxygen than an amount of oxygen satisfying a stoichiometric composition;
• a photoelectric conversion layer;
• an oxide semiconductor layer;
• a second electrode, wherein the first electrode, the work function control layer, the photoelectric conversion layer, the oxide semiconductor layer, and the second electrode are in this order;
• an insulating layer;
• and
• a third electrode, wherein
• the third electrode is apart from the second electrode, and
• the third electrode faces the photoelectric conversion layer via the insulating layer.

A photoelectric conversion element, comprising:

• a first electrode;
• a work function control layer that contains a hexavalent tungsten oxide, a pentavalent tungsten oxide, and a tetravalent tungsten oxide, wherein
• the work function control layer has a larger amount of oxygen than an amount of oxygen satisfying a stoichiometric composition, and
• an amount of the hexavalent tungsten oxide is larger than a total amount of the pentavalent tungsten oxide and the tetravalent tungsten oxide;
• a photoelectric conversion layer;
• an oxide semiconductor layer;
• and
• a second electrode, wherein the first electrode, the work function control layer, the photoelectric conversion layer, the oxide semiconductor layer, and the second electrode are in this order;
• an insulating layer;
• and
• a third electrode, wherein
• the third electrode is apart from the second electrode, and
• the third electrode faces the photoelectric conversion layer via the insulating layer.