Perovskite film, precursor composition thereof, method for preparing the same, and semiconductor element including the same

A precursor composition for preparing a perovskite film, comprising:

• a mixed solvent containing a dispersant and a polar solvent, wherein the dispersant is at least one selected from the group consisting of C1-5 alkyl alcohol, C2-6 alkoxy alcohol, and C5-8 alkoxyalkyl ester, and the polar solvent is at least one selected from the group consisting of γ-butyrolactone, dimethyl sulfoxide, dimethylformamide, dimethylacetamide, 1,3-dimethyl propylene urea and N-methylpyrrolidone;
• and
• a perovskite precursor salt and a molarity of 0.55 to 1.6 mM of crown ether compound dispersed or dissolved in the mixed solvent,
• wherein the volume percentage of the dispersant in the precursor composition is 5 to 9.5%;
• wherein the perovskite precursor salt comprises a compound of the chemical formula AX and a compound of the chemical formula BX2;
• wherein A is one monovalent cation selected from M1, M2 and M3;
• wherein M1 is a substituted or unsubstituted ammonium ion, M2 is a substituted or unsubstituted amidine ion, M3 is an alkali-metal ion selected from the group consisting of Cs+, Rb+, Li+ and Na+, and each of the substituents of the M1 and the M2 is C1-20 alkyl or C6-20 aryl when the M1 and the M2 are substituted;
• wherein B is one divalent cation selected from the group consisting of Ca2+, Sr2+, Cd2+, Cu2+, Ni2+, Mn2+, Fe2+, Co2+, Pb2+, Ge2+, Sn2+, Yb2+ and Eu2+;
• wherein X of AX is one monovalent anions selected from the group consisting of F−, Cl−, Br−, I31 , SCN−, and OCN−, and X of BX2 is one monovalent anion selected from the group consisting of F−, Cl−, Br−, I−, SCN−, and OCN−;
• and
• wherein the crown ether compound is at least one selected from the group consisting of 12-crown-4, 15-crown-5, 18-crown-6,21-crown-7, 24-crown-8, and 30-crown-10.