Memory cell with unipolar selectors
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKatherine H. Chiang, Chung-Te Lin, Mauricio Manfrini
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Abstract
In some embodiments, the present disclosure relates to an integrated chip. The integrated chip has a magnetic tunnel junction (MTJ) disposed on a first electrode that is within a dielectric structure over a substrate. A first unipolar selector is disposed within the dielectric structure and is coupled to the first electrode. A second unipolar selector is disposed within the dielectric structure and is coupled to the first electrode. The first unipolar selector and the second unipolar selector have different widths.
Claims20
An integrated chip, comprising:
- a magnetic tunnel junction (MTJ) disposed on a first electrode that is within a dielectric structure over a substrate;
- a first unipolar selector disposed within the dielectric structure and coupled to the first electrode;
- a second unipolar selector disposed within the dielectric structure and coupled to the first electrode;
- and
- wherein the first unipolar selector and the second unipolar selector have different widths.
An integrated chip, comprising:
- an inter-level dielectric (ILD) structure disposed over a substrate, wherein the ILD structure comprises a plurality of stacked ILD layers separated by a plurality of etch stop layers;
- a magnetic tunnel junction (MTJ) device disposed within the ILD structure between a first electrode and a second electrode, wherein the MTJ device has an MTJ including a pinned layer separated from a free layer by a dielectric tunnel barrier, and wherein the second electrode is disposed between the first electrode and a bit-line;
- a first unipolar selector disposed within the ILD structure and coupled between a first word-line and a first conductor that is below the first electrode, wherein the first unipolar selector is configured to allow current to flow through the MTJ device along a first direction;
- a second unipolar selector disposed within the ILD structure and coupled between a second word-line and the first conductor, wherein the second unipolar selector is configured to allow current to flow through the MTJ device along a second direction opposite the first direction;
- and
- wherein the first conductor has a lower surface that continuously extends from a first vertical line intersecting the first unipolar selector and the substrate and a second vertical line intersecting the second unipolar selector and the substrate.
A method of forming an integrated chip, comprising:
- forming a first unipolar selector over a semiconductor substrate;
- forming a magnetic tunnel junction (MTJ) device over the semiconductor substrate, the MTJ device having an MTJ disposed between a first electrode and a second electrode, wherein the first unipolar selector is coupled to the first electrode and configured to allow current to flow through the MTJ device along a first direction;
- forming a second unipolar selector over the semiconductor substrate, wherein the second unipolar selector is configured to be coupled to the first electrode and to allow current to flow through the MTJ device along a second direction opposing the first direction;
- and
- wherein the first unipolar selector and the second unipolar selector are arranged at different heights over the semiconductor substrate.
Dependencies are inferred from the claim text.