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US 11,778,835 B2Granted
Semiconductor switching devices having ferroelectric layers therein and methods of fabricating same
AssigneeSamsung Electronics Co., Ltd.
InventorsByounghoon Lee, Jongho Park, Musarrat Hasan, Wandon Kim, Seungkeun Cha
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Abstract
A semiconductor device includes a substrate, a channel on or in the substrate, a source/drain pair respectively on opposite ends of the channel, and a gate structure on the channel between the source/drain pair, wherein the gate structure includes an interfacial layer, a ferroelectric layer, a stabilization layer, an oxygen diffusion barrier layer, and a threshold voltage control layer that are sequentially stacked on the channel.
Claims20
A semiconductor device comprising:
- a substrate;
- a pair of source/drain regions on the substrate;
- a channel extending between the pair of source/drain regions, the channel including a plurality of portions spaced apart from one another in a vertical direction;
- and
- a gate structure on the channel, the gate structure including an interfacial layer on the channel, a ferroelectric layer on the interfacial layer, a stabilization layer on the ferroelectric layer, an oxygen diffusion barrier layer on the stabilization layer, and a threshold voltage control layer on the oxygen diffusion barrier layer;
- wherein the stabilization layer is configured to stabilize a ferroelectric phase of the ferroelectric layer to thereby preserve a ferroelectricity characteristic of the ferroelectric layer.
3 more elements
A semiconductor device, comprising:
- a gate all-around field-effect transistor on a substrate, the gate all-around field-effect transistor including:
- a plurality of channel portions spaced apart from one another in a vertical direction;
- and
- a gate structure on the plurality of channel portions, the gate structure including an interfacial layer on the plurality of channel portions, a ferroelectric layer on the interfacial layer, a stabilization layer on the ferroelectric layer, an oxygen diffusion barrier layer on the stabilization layer, and a threshold voltage control layer on the oxygen diffusion barrier layer;
- and
- wherein the stabilization layer is configured to stabilize a ferroelectric phase of the ferroelectric layer to thereby preserve a ferroelectricity characteristic of the ferroelectric layer.
3 more elements
A semiconductor device comprising:
- a multi-bridge channel field-effect transistor on a substrate, the multi-bridge channel field-effect transistor including:
- a gate structure on the substrate, the gate structure including an interfacial layer, a ferroelectric layer, a stabilization layer, an oxygen diffusion barrier layer, a threshold voltage control layer, an upper barrier layer, and a gate filling layer, which are sequentially stacked on the substrate;
- and
- wherein the stabilization layer is configured to stabilize a ferroelectric phase of the ferroelectric layer to thereby preserve a ferroelectricity characteristic of the ferroelectric layer.
1 more element
Dependencies are inferred from the claim text.