Memory structure
AssigneeUnited Microelectronics Corp.
InventorsChia-Hung Chen, Yu-Huang Yeh, Chuan-Fu Wang
Life of this patent
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Abstract
A memory structure including a substrate, a first dielectric layer, a second dielectric layer, a charge storage layer, an oxide layer, and a conductive layer is provided. The first dielectric layer is disposed on the substrate. The second dielectric layer is disposed on the first dielectric layer. The charge storage layer is disposed between the first dielectric layer and the second dielectric layer. The oxide layer is located at two ends of the charge storage layer and is disposed between the first dielectric layer and the second dielectric layer. The conductive layer is disposed on the second dielectric layer.
Claims7
A memory structure, comprising:
- a substrate;
- a first dielectric layer disposed on the substrate;
- a second dielectric layer disposed on the first dielectric layer;
- a charge storage layer disposed between the first dielectric layer and the second dielectric layer;
- an oxide layer located at two ends of the charge storage layer and disposed between the first dielectric layer and the second dielectric layer;
- a conductive layer disposed on the second dielectric layer;
- and
- an isolation structure located in the substrate, wherein an upper surface of the isolation structure has a recess, and the recess is adjacent to the substrate.
Dependencies are inferred from the claim text.