US 11,778,824 B2 · Apparatuses including band offset materials, and related systems

Abstract

A semiconductor device comprises a stack comprising an alternating sequence of dielectric structures and conductive structures, and a channel structure within an opening vertically extending through the stack and comprising a first semiconductor material having a first band gap. The semiconductor device also comprises a conductive plug structure within the opening and in direct contact with the channel region, and a band offset structure within the opening and in direct physical contact with the channel structure and the conductive plug structure. The band offset structure comprises a second semiconductor material having a second band gap different than the first band gap. The semiconductor device further comprises a conductive line structure electrically coupled to the conductive plug structure. A method of forming a semiconductor device and an electronic system are also described.

Claims14

Dependent claims

An apparatus, comprising:

channel material extending vertically through a stack of vertically alternating conductive materials and dielectric materials;
a conductive line adjacent to the channel material;
a conductive plug directly physically contacting the channel material along a vertical interface therebetween, the conductive plug directly physically contacting the conductive line;
and
band offset material directly physically contacting the channel material along a single, vertical interface therebetween, the band offset material directly physically contacting the conductive plug without directly physically contacting the conductive line, the band offset material having a band gap different than an additional band gap of the channel material.

2 more elements

Dependencies are inferred from the claim text.

Apparatuses including band offset materials, and related systems

Life of this patent

Apparatuses including band offset materials, and related systems

Life of this patent

Abstract

Claims14