Semiconductor device and manufacturing method of the semiconductor device
AssigneeSK hynix Inc.
InventorJae Hyoung Lee
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes forming a first stack, forming a sacrificial structure and a first contact passing through the first stack, forming a second stack on the first stack, forming a first hole through the second stack to expose the sacrificial structure, forming a second hole through the first stack by removing the sacrificial structure, forming a channel structure in the first and second holes, and forming a second contact passing through the second stack and coupled to the first contact.
Claims17
A method of manufacturing a semiconductor device, the method comprising:
- forming a first stack in a cell region and a connection region;
- forming a sacrificial structure in the cell region and a first contact in the connection region extending in a vertical direction in the first stack, simultaneously;
- forming a second stack over the first stack;
- forming a first hole through the second stack to expose the sacrificial structure;
- forming a second hole through the first stack by removing the sacrificial structure;
- forming a channel structure in the first and second holes;
- and
- forming, after forming the channel structure, a second contact extending in the vertical direction in the second stack and coupled to the first contact.
A method of manufacturing a semiconductor device, the method comprising:
- forming a substrate;
- forming an insulating structure over the substrate;
- forming a source structure and a first insulating layer over the insulating structure;
- forming a first contact extending in the vertical direction in the source structure and a second contact extending in the vertical direction in the first insulating layer;
- forming, after forming the first contact and the second contact, a first stack over the first contact, the second contact, the source structure, and the first insulating layer;
- forming a third contact extending in the vertical direction in the first stack and coupled to the second contact;
- forming a second stack over the first stack;
- and
- forming a fourth contact extending in the vertical direction in the second stack and coupled to the third contact.
Dependencies are inferred from the claim text.