Semiconductor memory devices and methods for fabricating the same

A semiconductor memory device comprising:

• a mold structure including a plurality of gate electrodes that are spaced apart from each other and stacked on a substrate;
• a channel structure penetrating the mold structure and crossing a respective level of each of the gate electrodes;
• a plurality of insulating patterns spaced apart from each other and stacked in the mold structure;
• and
• a through via in the insulating patterns, the through via penetrating the substrate and the mold structure,
• wherein the gate electrodes include a first word line and a second word line on the first word line,
• wherein the insulating patterns include a first insulating line stacked at the same level as the first word line, and a second insulating line stacked at the same level as the second word line, and
• wherein a first distance from a first boundary surface between the first word line and the first insulating line to the through via is different from a second distance from a second boundary surface between the second word line and the second insulating line to the through via.

A semiconductor memory device comprising:

• a plurality of mold insulating films spaced apart from each other and stacked on a substrate;
• a first word line group alternately stacked with some of the mold insulating films;
• a second word line group on the first word line group, the second word line group being alternately stacked with others of the mold insulating films;
• a channel structure crossing levels of each of the mold insulating films, the first word line group, and the second word line group;
• a plurality of first insulating lines spaced from each other and alternately stacked with the some of the mold insulating films;
• a plurality of second insulating lines on the first insulating lines, the second insulating lines being spaced from each other and alternately stacked with the others of the mold insulating films;
• and
• a first through via crossing the levels of each of the mold insulating films, levels of each of the first insulating lines, and levels of each of the second insulating lines,
• wherein the first insulating lines and the second insulating lines comprise a material that is different from that of the mold insulating films, and the first insulating lines comprise a different composition ratio of the material than the second insulating lines,
• wherein the first insulating lines are at the same level as the first word line group, and
• wherein the second insulating lines are at the same level as the second word line group.