Semiconductor storage device and manufacturing method for semiconductor device

A semiconductor storage device comprising:

• a stacked body in which a conductive layer and an insulating layer are stacked alternately in a first direction;
• a plurality of columnar bodies that extend in the first direction inside the stacked body and each includes an insulating core and a semiconductor body surrounding the insulating core:
• a plurality of charge storage films that are disposed between at least one of a plurality of the conductive layers and each of a plurality of the semiconductor bodies;
• a plurality of bit lines that extend above the stacked body in a second direction intersecting the first direction;
• an interlayer insulating layer that is between the stacked body and the plurality of bit lines;
• and
• a plurality of contacts each of which penetrates the interlayer insulating layer and is electrically connected to corresponding one of the plurality of bit lines,
• wherein the plurality of contacts include at least one of first contacts that is connected to corresponding one of the plurality of semiconductor bodies and at least one of second contacts that is connected to corresponding two of the plurality of semiconductor bodies, wherein
• the stacked body further includes at least one of first dividers that respectively separates some of the plurality of conductive layers in the second direction and extends in a third direction intersecting the first direction and the second direction, and
• when a specific second contact among the second contacts is disposed directly above a specific first divider among the first dividers, the specific first divider is disposed between corresponding two columnar bodies among the plurality of columnar bodies, and the specific second contact is directly connected to respective two insulating cores in the corresponding two columnar bodies.