Three-dimensional memory device including III-V compound semiconductor channel layer and method of making the same

A method of forming a three-dimensional memory device, comprising:

• providing a first assembly including a transfer substrate, a single-crystalline germanium-containing layer, and a first silicon oxide component layer;
• providing a second assembly including a substrate material layer and a second silicon oxide component layer;
• bonding the first silicon oxide component layer to the second silicon oxide component layer to form a silicon oxide layer;
• detaching the transfer substrate from an assembly including, from bottom to top, the substrate material layer, the silicon oxide layer, and the single-crystalline germanium-containing layer;
• growing a single-crystalline III-V compound semiconductor layer on the single-crystalline germanium-containing layer;
• forming an alternating stack of insulating layers and spacer material layers over the single-crystalline III-V compound semiconductor layer, wherein the spacer material layers are formed as, or are subsequently replaced with, electrically conductive layers;
• forming memory openings through the alternating stack;
• and
• forming memory opening fill structures in the memory openings, wherein each memory opening fill structure comprises a memory film and a vertical semiconductor channel having a bottom end that is electrically connected to the single-crystalline III-V compound semiconductor layer.