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US 11,778,809 B1Granted
Capcitor structure and method of forming thereof
AssigneeNanya Technology Corporation
InventorsJyun-Hua Yang, Kai Hung Lin
Life of this patent
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Abstract
A method of forming a capacitor structure includes following operations. A first electrode is formed. A hafnium-zirconium oxide (HZO) layer is formed over the first electrode under a first temperature. An interface dielectric layer is formed over the HZO layer under a second temperature greater than the first temperature. A second electrode is formed over the interface dielectric layer. The HZO layer and the interface dielectric layer are annealed.
Claims13
A method of forming a capacitor structure, comprising:
- forming a first electrode;
- forming a hafnium-zirconium oxide (HZO) layer over the first electrode under a first temperature, wherein the HZO layer is formed by a plasma atomic layer deposit process, and the first temperature is in a range between 25° C. and 75° C.;
- forming an interface dielectric layer over the HZO layer under a second temperature greater than the first temperature;
- forming a second electrode over the interface dielectric layer;
- and
- annealing the HZO layer and the interface dielectric layer.
3 more elements
A method of forming a capacitor structure, comprising:
- forming a first electrode, wherein the first electrode comprises a first electrode hollow tube;
- forming hafnium-zirconium oxide (HZO) layers over an inner sidewall and an outer sidewall of the first electrode hollow tube under a first temperature, wherein the HZO layers are formed by a plasma atomic layer deposit process, and the first temperature is in a range between 25° C. and 75° C.;
- forming interface dielectric layers over the HZO layers on the inner sidewall and the outer sidewall of the first electrode hollow tube under a second temperature greater than the first temperature;
- and
- forming second electrodes, wherein the second electrodes comprises two second electrode hollow tubes, one of the second electrode hollow tubes surrounds the HZO layers and the interface dielectric layers, and another second electrode hollow tube is filled in a space formed by one of the interface dielectric layers inside the first electrode hollow tube.
2 more elements
Dependencies are inferred from the claim text.