Method of manufacturing integrated circuit device

A method of manufacturing an integrated circuit device, comprising:

• forming a first photosensitive unit and a first photo-insensitive unit, wherein the first photo-insensitive unit receives light and is ineffective in sensing the light;
• forming a shallow trench isolation (STI) between the first photosensitive unit and the first photo-insensitive unit, wherein the STI comprises a dielectric material;
• and
• forming a lens to cover the first photosensitive unit and the first photo-insensitive unit, the lens having a single radius of curvature and an optical axis passing through a surface of the curvature at the center of the lens, wherein the optical axis of the lens passes the STI.

A method of manufacturing an integrated circuit device, comprising:

• providing a substrate, wherein a portion of the substrate is without additional doping and another portion of the substrate is with additional doping;
• forming a light-sensitive region, a light-insensitive region and an isolation structure in the substrate, wherein the light-insensitive region is the portion of the substrate without additional doping;
• and
• forming a lens to cover the light-sensitive region and the light-insensitive region, the lens having a single radius of curvature and an optical axis passing through a surface of the curvature at the center of the lens, wherein the optical axis passes through the isolation structure, and a light beam passing through the lens is simultaneously incident into the light-sensitive region and the light-insensitive region.