Radio frequency switch biasing topologies

A wireless device comprising:

• a first series switch coupled to a first output port, the first series switch including a first field-effect transistor (FET), a second FET, a third FET, a fourth FET, a fifth FET, and a sixth FET;
• and
• a second series switch coupled to a second output port;
• the fifth FET being coupled to the first FET, a gate of the fifth FET being directly coupled to a gate of the sixth FET, the first FET being coupled to the second FET, the first FET and the second FET being coupled to a first gate voltage, and the fifth FET and the sixth FET being coupled to a second gate voltage that is different than the first gate voltage.

A semiconductor die comprising:

• a first series switch coupled to a first output port, the first series switch including a first field-effect transistor (FET), a second FET, a third FET, a fourth FET, a fifth FET, and a sixth FET;
• and
• a second series switch coupled to a second output port;
• the fifth FET being coupled to the first FET, a gate of the fifth FET being coupled to a gate of the sixth FET, the first FET being coupled to the second FET, the first FET and the second FET being coupled to a first gate voltage, and the fifth FET and the sixth FET being coupled to a second gate voltage that is different than the first gate voltage.