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US 11,777,061 B2Granted
Light emitting diode device with tunable emission
AssigneeLumileds LLC
InventorsRobert Armitage, Isaac Wildeson
Life of this patent
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Abstract
Described at light emitting diode (LED) devices emitting different colors on the same wafer, which facilitates their integration with close packing density (not requiring transfer of devices from two different wafers to a third substrate module). The LED devices and driving methods allow light of different colors and similar luminance levels to be emitted for given input current.
Claims19
A light emitting diode (LED) device comprising:
- a mesa array comprising a first mesa and a second mesa separated by a trench, the first mesa and the second mesa comprising semiconductor layers, the semiconductor layers including an n-type layer, an active layer, and a p-type layer, the trench having at least one side wall and extending to the n-type layer, the first mesa having a first width and the second mesa having a second width, the first width greater than the second width;
- an anode contact comprising a first anode region on a top surface of the first mesa and a second anode region on a top surface of the second mesa, the first anode region larger than the second anode region;
- and
- a cathode contact adjacent the first mesa and second mesa.
1 more element
A light emitting diode (LED) device comprising:
- a first mesa array comprising a plurality of first mesas separated by a first trench, the first trench filled with a dielectric layer;
- a second mesa array comprising a plurality of second mesas separated by a second trench, the second trench filled with the dielectric layer;
- a first anode region on a top surface of the plurality of first mesas;
- a second anode region on a top surface of the plurality of second mesas, the first anode region larger than the second anode region;
- and
- a cathode contact adjacent to the first mesa array and the second mesa array,
- the plurality of first mesas and the plurality of second mesas comprising semiconductor layers, the semiconductor layers including an n-type layer, an active layer, and a p-type layer, and the first trench and the second trench extending to the n-type layer.
4 more elements
Dependencies are inferred from the claim text.