Nanorod light emitting device and method of manufacturing the same

A display apparatus comprising:

• a plurality of pixel electrodes;
• a common electrode corresponding to the plurality of pixel electrodes;
• and
• a plurality of nanorod light-emitting devices connected between each pixel electrode and the common electrode,
• wherein each nanorod light-emitting device comprises:
• a first semiconductor layer doped with a first conductive type impurity;
• an emission layer disposed above the first semiconductor layer, the emission layer comprising a quantum well structure;
• a second semiconductor layer disposed above the emission layer and doped with a second conductive type impurity that is electrically opposite to the first conductive type impurity;
• a conductive layer disposed between at least one of:
• a center portion of a lower surface of the emission layer and the first semiconductor layer;
• and
• a center portion of an upper surface of the emission layer and the second semiconductor layer;
• and
• a current blocking layer surrounding a sidewall of the conductive layer, wherein the current blocking layer is directly interposed between at least one of:
• an edge of the lower surface of the quantum well structure and an edge of an upper surface of the first semiconductor layer;
• and
• an edge of the upper surface of the quantum well structure and an edge of a lower surface of the second semiconductor layer.

A method of manufacturing a nanorod light-emitting device, the method comprising:

• forming a sacrificial layer on a semiconductor substrate;
• forming a first semiconductor layer doped with a first conductive type impurity on the sacrificial layer;
• forming an emission layer above the first semiconductor layer, the emission layer comprising a quantum well structure;
• forming, above the emission layer, a second semiconductor layer doped with a second conductive type impurity that is electrically opposite to the first conductive type impurity;
• forming a conductive layer material on the first semiconductor layer between the forming of the first semiconductor layer and the forming of the emission layer or forming a conductive layer on the emission layer between the forming of the emission layer and the forming of the second semiconductor layer;
• forming a plurality of nanorod light-emitting devices by partially etching the first semiconductor layer, the emission layer, the second semiconductor layer, and the conductive layer;
• and
• forming a current blocking layer surrounding a sidewall of the conductive layer by oxidizing the sidewall of the conductive layer through an oxidization process such that the current blocking layer is directly interposed between at least one of:
• an edge of the lower surface of the quantum well structure and an edge of an upper surface of the first semiconductor layer;
• and
• an edge of the upper surface of the quantum well structure and an edge of a lower surface of the second semiconductor layer.