Sensors and electronic devices

A sensor, comprising:

• a first electrode and a second electrode facing each other;
• and
• a light absorbing layer between the first electrode and the second electrode,
• wherein the light absorbing layer includes a near-infrared absorbing material and a counter material defining a pn junction with the near-infrared absorbing material, wherein the near-infrared absorbing material is configured to absorb light in both a first absorption spectrum having a first absorption peak in a first infrared wavelength region and a second absorption spectrum having a second absorption peak in a second infrared wavelength region, wherein the second absorption spectrum does not at least partially overlap with the first absorption spectrum, wherein the second infrared wavelength region is a region having a longer wavelength than that of the first infrared wavelength region,
• wherein the second absorption spectrum has a lower absorption intensity than the first absorption spectrum,
• wherein a maximum absorption wavelength of an absorption spectrum of the sensor is within a range of about 800 nm to about 990 nm, and
• wherein the sensor is configured to generate an electrical current based on photoelectrically converting incident light in a wavelength region of greater than or equal to about 1100 nm.

A sensor, comprising:

• a first electrode and a second electrode facing each other;
• and
• a light absorbing layer between the first electrode and the second electrode,
• wherein the light absorbing layer includes a near-infrared absorbing material and a counter material defining a pn junction with the near-infrared absorbing material, wherein the near-infrared absorbing material is configured to absorb light in both a first absorption spectrum having a first absorption peak in a first infrared wavelength region and a second absorption spectrum having a second absorption peak in a second infrared wavelength region, wherein the second absorption spectrum does not at least partially overlap with the first absorption spectrum, wherein the second infrared wavelength region is a region having a longer wavelength than that of the first infrared wavelength region,
• wherein the second absorption spectrum has a lower absorption intensity than the first absorption spectrum,
• wherein a maximum absorption wavelength of the light absorbing layer is within a range of about 700 nm to about 1000 nm,
• wherein an external quantum efficiency (EQE) spectrum of the sensor has a local maximum EQE value at a local peak wavelength that is greater than about 1000 nm, such that
• EQE values of the EQE spectrum of the sensor at all wavelengths up to 100 nm shorter than the local peak wavelength are smaller than the local maximum EQE value, and
• EQE values of the EQE spectrum of the sensor at all wavelengths up to 100 nm longer than the local peak wavelength are smaller than the local maximum EQE value.